SI2367DS-T1-GE3
| Part No | SI2367DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 3.8A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18162
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.452 | |
| 10 | 0.443 | |
| 100 | 0.4294 | |
| 1000 | 0.4158 | |
| 10000 | 0.3978 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Weight | 1.437803 g |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Rise Time | 9 ns |
| REACH SVHC | Unknown |
| Rds On Max | 66 mΩ |
| Resistance | 66 MΩ |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Input Capacitance | 561 pF |
| Power Dissipation | 960 mW |
| Threshold Voltage | -400 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 66 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 3.8 A |
| Drain to Source Voltage (Vdss) | -20 V |
