SI3865DDV-T1-GE3
| Part No | SI3865DDV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | SI3865DDV-T1-GE3 Dual N/P-channel SiC MOSFET Transistor; 2.8 A; 12 V; 6-Pin TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
21020
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5459 | |
| 10 | 0.535 | |
| 100 | 0.5186 | |
| 1000 | 0.5022 | |
| 10000 | 0.4804 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.7 mm |
| Height | 1 mm |
| Length | 3.1 mm |
| Weight | 19.986414 mg |
| Interface | On/Off |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| REACH SVHC | No SVHC |
| Resistance | 165 mΩ |
| Case/Package | TSOP |
| Current Rating | 2.8 A |
| Number of Pins | 6 |
| Output Current | 1 A |
| Number of Outputs | 1 |
| Power Dissipation | 830 mW |
| Max Output Current | 2.8 A |
| Max Supply Voltage | 12 V |
| Min Supply Voltage | 1.5 V |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Output Configuration | High Side |
| Max Power Dissipation | 830 mW |
| Nominal Input Voltage | 12 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
