SI4160DY-T1-GE3
| Part No | SI4160DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 25.4A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
23877
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.378 | |
| 10 | 1.3504 | |
| 100 | 1.3091 | |
| 1000 | 1.2678 | |
| 10000 | 1.2126 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 12 ns |
| Rise Time | 16 ns |
| REACH SVHC | Unknown |
| Rds On Max | 4.9 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1 V |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 2.071 nF |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28 ns |
| Max Power Dissipation | 5.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 5.1 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 25.4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
