SI7850DP-T1-E3
| Part No | SI7850DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 6.2A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
48134
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9968 | |
| 10 | 1.9569 | |
| 100 | 1.897 | |
| 1000 | 1.8371 | |
| 10000 | 1.7572 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 10 ns |
| REACH SVHC | Unknown |
| Rds On Max | 22 mΩ |
| Resistance | 22 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 3 V |
| Termination | SMD/SMT |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Dual Supply Voltage | 60 V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 6.2 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Manufacturer Package Identifier | S17-0173-Single |
| Drain to Source Breakdown Voltage | 60 V |
